DocumentCode :
3390657
Title :
Analysis of CNT electronics structure to design CNTFET
Author :
Farhana, Soheli ; Alam, A. H. M. Zahirul ; Motakabber, S.M.A. ; Khan, Sharifullah
Author_Institution :
Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
fYear :
2013
fDate :
2-4 Jan. 2013
Firstpage :
329
Lastpage :
332
Abstract :
In this paper, graphene electronic structure of carbon nanotubes has been analyzed and validate with past theoretical and experimental results. The energy dispersion relation, effective mass and intrinsic carrier concentration of graphene have been analyzed to build diverse carbon nanotubes. The electronics properties of graphene are subject to change with the different diameters and wrapping angles of carbon nanotubes. Different chiral vector (n, m) of a graphene allows to design carbon nanotube for a wide range of applications, which can be achieved from the analyzed carrier concentration calculation. The proposed calculations set a higher boundary for a wide range of applications including the integration of carbon nanotube internal architecture and carbon nanotube field effect transistors.
Keywords :
carbon nanotube field effect transistors; graphene; integrated circuit design; vectors; CNT electronics structure; CNTFET design; carbon nanotube design; carbon nanotube field effect transistor; carbon nanotube internal architecture; chiral vector; electronics property; energy dispersion relation; graphene electronic structure; intrinsic carrier concentration; mass concentration; Carbon nanotubes; Dispersion; Effective mass; Equations; Graphene; Mathematical model; Vectors; Carbon nanotube; dos; graphene;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
ISSN :
2159-3523
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2013.6466038
Filename :
6466038
Link To Document :
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