Fabrication and characterization of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped structure at InGaAs/InP interface

Author

Meng, Q.Q. ; Liu, Charles Y. ; Wang, Huifang ; Ang, K.S. ; Manoj, K. ; Guo, T.X.

Author_Institution

Temasek Labs., Nanyang Technol. Univ., Singapore, Singapore

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

338

Lastpage

341

Abstract

This paper describes the fabrication and high speed characterization for uni-traveling-carrier photodetectors (UTC-PD) with dipole-doping layers. The dipole-doping InGaAs/InP layer has been introduced at the InGaAs (absorption layer) and InP (collection layer) interface to prevent current blocking in our UTC-PD devices. These UTC-PDs have achieved high photocurrent of 52 mA, high responsivity of 0.44 A/W as well as high 3dB bandwidth of ~17.5 GHz. Furthermore, a UTC-PD equivalent circuit model is used to simulate and interpret device results of our UTC-PDs.

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; indium compounds; photoconductivity; photodetectors; InGaAs-InP; UTC-PD device; absorption layer; collection layer; current 52 mA; dipole doped structure; equivalent circuit model; fabrication; photocurrent; responsivity; unitraveling carrier photodetector; Frequency measurement; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Optical variables measurement; Photodiodes; dipole doping; frequency response; photocurrent; uni-traveling-carrier photodetector (UTC-PD);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466041

Filename

6466041