DocumentCode
3390766
Title
NPN yield improvement with ozone surface treatment prior to emitter poly deposition
Author
Tran-Quinn, T. ; Bell, N. ; Cook, R. ; Fung, M.S. ; Andrews, J.W. ; Hilscher, D. ; Szmyd, D. ; Saikuma, V. ; Ketcheson, R. ; Kellawon, P. ; Calvelli, S.
Author_Institution
Philips Semicond., Hopewell Junction, NY, USA
fYear
2003
fDate
31 March-1 April 2003
Firstpage
292
Lastpage
296
Abstract
A localized product yield degradation was observed on 0.25um BiCMOS product and was found to correlate to suppression of the NPN base and emitter currents. The addition of an ozone plasma clean prior to emitter polysilicon deposition helped to improve base current distribution across the wafers.
Keywords
bipolar transistors; ozone; plasma materials processing; surface cleaning; 0.25 micron; BiCMOS product yield; NPN transistor; O3; base current; emitter current; ozone plasma clean; polysilicon emitter deposition; surface treatment; BiCMOS integrated circuits; Cleaning; Contacts; Etching; Failure analysis; Plasma applications; Silicon; Surface treatment; Testing; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
ISSN
1078-8743
Print_ISBN
0-7803-7681-1
Type
conf
DOI
10.1109/ASMC.2003.1194509
Filename
1194509
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