Title :
A dual-silicon-nanowire based nanoelectromechanical switch
Author :
You Qian ; Liang Lou ; Pott, Vincent ; Tsai, M.J. ; Chengkuo Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
A dual-silicon-nanowires based nanoelectromechanical (NEMS) switch is fabricated using standard complementary metal-oxide-semiconductor (CMOS) compatible process. The switch comprises a capacitive paddle and two silicon nanowires both connect with the paddle, form a U-shape structure. The high electrostatic force generated from the large capacitive paddle and high flexible structure favor of silicon nanowires result to ultra-low pull-in voltage. The pull-in voltage is measured at 0.9V. According to the preliminary results, this switch demonstrates great potential in decreasing pull-in voltage.
Keywords :
CMOS integrated circuits; electrostatics; microswitches; nanoelectromechanical devices; nanowires; silicon; CMOS compatible process; NEMS switch; Si; U-shape structure; capacitive paddle; complementary metal-oxide-semiconductor; dual-silicon-nanowire; electrostatic force; nanoelectromechanical switch; pull-in voltage; voltage 0.9 V; Nanoelectromechanical systems; Nanowires; Resists; Silicon; Substrates; Switches; Switching circuits;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466044
