A dual-silicon-nanowire based nanoelectromechanical switch

Author

You Qian ; Liang Lou ; Pott, Vincent ; Tsai, M.J. ; Chengkuo Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

350

Lastpage

352

Abstract

A dual-silicon-nanowires based nanoelectromechanical (NEMS) switch is fabricated using standard complementary metal-oxide-semiconductor (CMOS) compatible process. The switch comprises a capacitive paddle and two silicon nanowires both connect with the paddle, form a U-shape structure. The high electrostatic force generated from the large capacitive paddle and high flexible structure favor of silicon nanowires result to ultra-low pull-in voltage. The pull-in voltage is measured at 0.9V. According to the preliminary results, this switch demonstrates great potential in decreasing pull-in voltage.

Keywords

CMOS integrated circuits; electrostatics; microswitches; nanoelectromechanical devices; nanowires; silicon; CMOS compatible process; NEMS switch; Si; U-shape structure; capacitive paddle; complementary metal-oxide-semiconductor; dual-silicon-nanowire; electrostatic force; nanoelectromechanical switch; pull-in voltage; voltage 0.9 V; Nanoelectromechanical systems; Nanowires; Resists; Silicon; Substrates; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466044

Filename

6466044