Title :
GaAs HBT PIN diode attenuators and switches
Author :
Kobayashi, K. ; Oki, A.K. ; Umemoto, D.K. ; Claxton, S. ; Streit, D.C.
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
Abstract :
An AlGaAs-GaAs heterojunction-bipolar-transistor (HBT) two-stage PIN diode attenuator from 1-10 GHz and an X-band one-pole, two-throw PIN diode switch are discussed. The two-stage PIN attenuator has over 50-dB dynamic range at 2 GHz and a maximum IP3 of 9 dBm. The minimum insertion loss is 1.7 dB per stage, and response is flat to 10 GHz. The X-band switch has an insertion loss of 0.82 dB and an off-isolation of 25 dB. The bandwidth is greater than 35% and the IP3 is greater than 34.5 dBm. Both of these circuits consist of PIN diodes constructed from the base-collector molecular-beam-epitaxy (MBE) layers of a baseline HBT process. The monolithic integration of PIN diode switch and attenuation functions in an HBT technology without additional process or MBE material growth is shown.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; attenuators; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; p-i-n diodes; semiconductor switches; 0.82 dB; 1 to 10 GHz; 1.7 dB; AlGaAs-GaAs; HBT; MBE material growth; PIN diode attenuators; PIN diode switch; SHF; X-band; base-collector MBE layers; heterojunction-bipolar-transistor; insertion loss; monolithic integration; one-pole; two-stage; two-throw; Attenuators; Circuits; Communication switching; Dielectric substrates; Gallium arsenide; Heterojunction bipolar transistors; Parasitic capacitance; Schottky diodes; Space technology; Switches;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247456
