Title :
A highly-efficient 7-watt 16 GHz monolithic pseudomorphic HEMT amplifier
Author :
Tserng, Hua-Quen ; Saunier, P.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The achievement of a record CW output power of 7 W with 4.5-dB gain and 30.8% power-added efficiency with a monolithic, single-stage, 0.25 mu m*12-mm AlGaAs-InGaAs pseudomorphic high-electron-mobility-transistor (HEMT) amplifier at 16.3 GHz is discussed. At 5-W output, the power-added efficiency is 35% with 6-dB power gain. The chip size is 3 mm*3.5 mm.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; 16 to 16.3 GHz; 30.8 percent; 35 percent; 4.5 dB; 5 W; 6 dB; 7 W; AlGaAs-InGaAs; CW output power; MMIC; SHF; amplifier; high-electron-mobility-transistor; pseudomorphic HEMT; single-stage; Circuits; Frequency; MMICs; Microwave amplifiers; PHEMTs; Power amplifiers; Power generation; Radiofrequency amplifiers; Scattering parameters; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247466
