High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA

Author

Duh, K.H.G. ; Liu, S.M.J. ; Wang, S.C. ; Ho, P. ; Chao, P.C.

Author_Institution

General Electric Electron. Lab., Syracuse, NY, USA

fYear

1993

fDate

14-15 June 1993

Firstpage

99

Lastpage

102

Abstract

A monolithic three-stage pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) low-noise amplifier is discussed. The amplifier exhibits state-of-the-art low noise and gain performance at Q-band frequencies. It exhibits 22 dB of gain with 3-dB noise figure from 41 to 45 GHz. From 35 to 50 GHz, it has a flat gain response of over 22 dB gain across the Q-band range. The amplifier uses 0.15- mu m-gate-length GaAs-based pseudomorphic HEMTs with on-chip matching circuits and bias circuits. The chip size is 2.3 mm*1.0 mm.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 0.15 micron; 22 dB; 3 dB; 35 to 50 GHz; InGaAs-GaAs; LNA; MIMIC; MM-wave IC; MMIC; Q-band; bias circuits; high-electron-mobility-transistor; low-noise amplifier; on-chip matching circuits; pseudomorphic HEMTs; Circuit testing; Fabrication; Gallium arsenide; HEMTs; Impedance matching; Indium gallium arsenide; MMICs; Noise figure; PHEMTs; Performance gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247467

Filename

247467