The demonstration of Ka-band multi-functional MMIC circuits fabricated on the same PHEMT wafer with superior performance

Author

Kurdoghlian, A. ; Win, C.S. ; Yarn, W. ; Chen, J. ; Hu, M. ; Pao, C. ; Bosch, D.

Author_Institution

Hughes Aircraft Co., Torrance, CA, USA

fYear

1993

fDate

14-15 June 1993

Firstpage

97

Lastpage

98

Abstract

The superior performance of Ka-band monolithic-microwave-integrated-circuits (MMIC) power and low-noise amplifiers (LNAs), both fabricated on the same wafer using delta doped AlGaAs-InGaAs-GaAs pseudomorphic high-electron-mobility transistor (PHEMT) technology is discussed. The balanced power amplifier exhibited an output power of 500 mK with 1 2-dB associated gain and a power-added efficiency of 32% over the 34- to 36-GHz frequency range. The LNA circuit demonstrated a noise figure of 3.5 dB with an associated gain of 17 dR over the 33- to 37-GHz frequency range. These circuits show that millimeter-wave multifunctional circuits can be fabricated on a single wafer without sacrificing individual circuit performance.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; power amplifiers; 12 dB; 17 dB; 3.5 dB; 32 percent; 33 to 37 GHz; 500 mW; AlGaAs-InGaAs-GaAs; Ka-band; MIMIC; PHEMT wafer; balanced power amplifier; delta doped; high-electron-mobility transistor; low-noise amplifiers; millimeter-wave multifunctional circuits; monolithic-microwave-integrated-circuits; multi-functional MMIC circuits; pseudomorphic HEMT; Frequency; Low-noise amplifiers; MMICs; Millimeter wave circuits; Millimeter wave technology; Millimeter wave transistors; Noise figure; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247468

Filename

247468