DocumentCode :
3391727
Title :
LV/LP CMOS square-law circuits
Author :
Hyogo, Akira ; Hwang, Changku ; Ismai, Mohammed ; Sekine, Keisuke
Author_Institution :
Dept. of Electr. Eng., Sci. Univ. of Tokyo, Japan
Volume :
2
fYear :
1997
fDate :
3-6 Aug. 1997
Firstpage :
1181
Abstract :
In this paper several new CMOS square-law circuit cells with two high impedance input terminals are proposed to achieve wide input voltage operating range with low supply voltage. These cells are constructed based on two methods introduced and as a result, highly accurate signal processing with low power dissipation is possible. The simulations and/or measurements carried out using MOSIS 2 μm n-well process have shown that one of the cells based on the adaptive bias technique, one of the methods introduced, achieved ω3dB of 426 MHz and the input voltage operating range of 1.8 V with a 3 V supply.
Keywords :
CMOS analogue integrated circuits; analogue processing circuits; signal processing equipment; 1.8 to 3 V; 2 micron; 426 MHz; CMOS square-law circuits; MOSIS n-well process; accurate signal processing; adaptive bias technique; high impedance input terminals; low power dissipation; low supply voltage; Adaptive signal processing; CMOS process; Circuit simulation; Impedance; Low voltage; MOS devices; MOSFETs; Power dissipation; Signal processing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Print_ISBN :
0-7803-3694-1
Type :
conf
DOI :
10.1109/MWSCAS.1997.662290
Filename :
662290
Link To Document :
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