DocumentCode
3391906
Title
A broadband, planar, doubly balanced monolithic Ka-band diode mixer
Author
Maas, S.A. ; Chang, K.W.
Author_Institution
Nonlinear Consulting, Long Beach, CA, USA
fYear
1993
fDate
14-15 June 1993
Firstpage
53
Lastpage
55
Abstract
A planar monolithic diode mixer that achieves 5-10-dB conversion loss and very low distortion and spurious responses over a 26-40-GHz RF and local oscillator (LO) bandwidth and DC-10-GHz IF is described. The diodes are the gate-to-channel junctions of 0.2- mu m*80- mu m InGaAs HEMTs, and the baluns are Marchand-like coplanar structures.<>
Keywords
MMIC; mixers (circuits); 0 to 10 GHz; 14 GHz; 26 to 40 GHz; 5 to 10 dB; HEMTs; InGaAs; Ka-band; Marchand-like coplanar structures; baluns; broadband; conversion loss; doubly balanced; gate-to-channel junctions; planar monolithic diode mixer; wideband planar design; Bandwidth; Coupling circuits; Dielectric substrates; Diodes; Impedance matching; Inductance; RLC circuits; Radio frequency; Strips; Surface impedance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location
Atlanta, GA, USA
Print_ISBN
0-7803-1322-4
Type
conf
DOI
10.1109/MCS.1993.247478
Filename
247478
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