Title :
A 20-50 GHz MMIC amplifier with 21 dBm output power and its application as a frequency doubler
Author :
Kondoh, H. ; Cognata, A.
Author_Institution :
Hewlett-Packard, Santa Rosa, CA, USA
Abstract :
A 20-50-GHz MMIC amplifier, designed on a 0.25- mu m-gate PMODFET production IC process that exhibits a 13+or-1.8 dB gain with greater than 21-dBm saturated output power across the band is discussed. A traveling-wave-input power-combined-output configuration developed for the input stage design facilitates area-efficient broadband impedance matching and also permits the amplifier to operate as a frequency doubler. More than 10-dBm output power is achieved over the 20-50-GHz doubled frequency band for 20-dBm input power.<>
Keywords :
MMIC; field effect integrated circuits; frequency multipliers; high electron mobility transistors; impedance matching; microwave amplifiers; 0.25 micron; 14 dB; 20 to 50 GHz; EHF; MIMIC; MMIC amplifier; PMODFET production IC process; broadband impedance matching; frequency doubler; input stage design; monolithic microwave IC; power-combined-output; traveling-wave-input; Broadband amplifiers; FETs; Frequency; MMICs; Microwave amplifiers; Microwave technology; Operational amplifiers; Power amplifiers; Power generation; Semiconductor device measurement;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247482
