12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias

Author

Hughes, B. ; Perdomo, I. ; Kondoh, H.

Author_Institution

Hewlett Packard, Santa Rosa, CA, USA

fYear

1993

fDate

14-15 June 1993

Firstpage

31

Lastpage

34

Abstract

A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz MMIC low-noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm/sup 2/) than previous MMIC LNAs.<>

Keywords

MMIC; field effect integrated circuits; field effect transistors; microwave amplifiers; semiconductor device models; semiconductor device noise; solid-state microwave devices; 1.6 dB; 12 GHz; 25.6 dB; FET noise model; MMIC amplifier; MODFET size; SHF; bias; low-noise amplifier; monolithic microwave integrated circuit; scalable bias dependent model; three stage LNA; FET integrated circuits; HEMTs; Integrated circuit modeling; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFET circuits; MODFET integrated circuits; Microwave FETs; Microwave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247483

Filename

247483