Title :
A high performance 1.5 dB low noise GaAss PHEMT MMIC amplifier for low cost 1.5-8 GHz commercial applications
Author :
Morkner, H. ; Frank, M. ; Millicker, D.
Author_Institution :
Hewlett-Packard Co., MCD R&D Div., Newark, CA, USA
Abstract :
State-of-the-art 0.15- mu m-gate PHEMT (pseudomorphic high-electron-mobility transistor) devices, self-biasing current sources, source follower interstage, resistive feedback, and on-chip matching have been used to make an unique MMIC (monolithic microwave integrated circuit) LNA (low noise amplifier). Typical gain of 21 dB, VSWR (voltage standing wave ratio) of 2:1, and P-1-dB output power of 7 dBm have been measured. The die area is small (0.40 mm/sup 2/) and is compatible with surface mount packages. DC power requirements are low, consuming only 14 mA from a single +5-V supply. This MMIC LNA has the best combination of noise figure, gain. low current, match, wide bandwidth, and low cost of any advertised or published product known to the authors to date.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; 0.15 micron; 1.5 dB; 1.5 to 8 GHz; 14 mA; 21 dB; 5 V; DC power requirements; GaAs; LNA; MMIC amplifier; PHEMT; commercial applications; high performance; high-electron-mobility transistor; low cost; low noise amplifier; monolithic microwave integrated circuit; on-chip matching; onchip matching; pseudomorphic HEMT; resistive feedback; self-biasing current sources; single +5-V supply; source follower interstage; wide bandwidth; Costs; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave devices; Microwave integrated circuits; Microwave transistors; Monolithic integrated circuits; PHEMTs; State feedback;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247487
