Title :
New considerations for optimization of signal and noise performances of mm-wave FETs based on sliced modeling
Author :
Abdipour, Abdolali ; Moradi, Gholamreza
Author_Institution :
Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
We have analyzed the signal and noise performances of mm-wave FETs and specially focused on three factors in the device modeling. These include the effect of electrode loading, the effect of the location and the number of input/output probes and the influence of the number of slices in sliced modeling. The results show that these factors may improve the device performance and increase the accuracy of the device modeling. This analysis is very important in the application, modeling and optimization of mm-wave transistors, specially for travelling wave transistors (TWTs)
Keywords :
Schottky gate field effect transistors; electrodes; high electron mobility transistors; millimetre wave field effect transistors; optimisation; semiconductor device models; semiconductor device noise; HEMT; MESFET; TWT; device modeling; device modeling accuracy; device performance; electrode loading; input/output probes location; mm-wave FET; mm-wave transistors; noise performance optimization; signal optimization; sliced modeling; travelling wave transistors; Couplings; Distributed control; Electrodes; FETs; HEMTs; Noise figure; Performance analysis; Probes; Signal analysis; Transmission lines;
Conference_Titel :
Radio and Wireless Conference, 1999. RAWCON 99. 1999 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-5454-0
DOI :
10.1109/RAWCON.1999.810961
