A C-band low power high dynamic range GaAs MESFET low noise amplifier

Author

Yoo, Seungyup ; Heo, Deukhyoun ; Laskar, Joy ; Taylor, Stewart S.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1999

fDate

1999

Firstpage

191

Lastpage

194

Abstract

A low power high dynamic range C-band GaAs MESFET low noise cascode amplifier is presented. An accurate small signal model and a noise model of the device based upon measurement are developed for the LNA design. At 5 GHz, a 50 Ω noise figure of 1.9 dB and an IIP3 of 5 dBm are measured at a power consumption of 13.2 mW from a 3 V DC supply. The measurement results show good agreement with simulation results. This design has the highest IIP3 compared to other GaAs MESFET LNAs at this frequency range

Keywords

III-VI semiconductors; MESFET integrated circuits; MMIC power amplifiers; gallium arsenide; integrated circuit measurement; semiconductor device models; semiconductor device noise; 1.9 dB; 13.2 mW; 3 V; 5 GHz; 50 ohm; C-band; DC supply; GaAs; III V semiconductor; IIP3; LNA design; MESFET low noise amplifier; MMIC; SHF; accurate small signal model; frequency range; high dynamic range amplifier; low noise cascode amplifier; low power amplifier; measurement; measurement results; noise figure; noise model; power consumption; simulation results; Dynamic range; Energy consumption; Gallium arsenide; High power amplifiers; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Power measurement; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 1999. RAWCON 99. 1999 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-5454-0

Type

conf

DOI

10.1109/RAWCON.1999.810962

Filename

810962