An enhanced low phase noise VCO in 130 nm CMOS for 60 GHz applications

Author

Farahabadi, Payam M. ; Naimi, Hossein Miar ; Zabihi, Mariam

Author_Institution

Integrated Circuit Res. Lab., Babol Univ. of Technol., Babol, Iran

Volume

1

fYear

2009

fDate

19-20 Dec. 2009

Firstpage

40

Lastpage

43

Abstract

In this paper, a low phase noise cross-coupled differential voltage controlled oscillator is designed in 0.13-Â¿m CMOS for use in 60 GHz applications. Using a tuned output buffer, the single-ended output voltage of 1 Vp-p is provided into a 100-fF capacitive load. Measured phase noise below -96 dBc/Hz at a 1-MHz offset is achieved, using an enhanced current sources and phase noise filter. The design has a tune range of 5% around the center frequency of 62 GHz. The low phase noise and high output drive capability make the VCO suitable for CDR circuits in IEEE 802.15.3c.a.

Keywords

CMOS integrated circuits; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS; IEEE 802.15.3c.a; capacitance 100 fF; frequency 60 GHz; low phase noise VCO; phase noise filter; single-ended output voltage; size 130 nm; tuned output buffer; CMOS process; CMOS technology; Frequency; Integrated circuit technology; Isolation technology; Millimeter wave communication; Millimeter wave technology; Phase noise; Space technology; Voltage-controlled oscillators; coplanar waveguide; millimeter wave resonator; phase noise; voltage controlled oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Intelligent Transportation System (PEITS), 2009 2nd International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4244-4544-8

Type

conf

DOI

10.1109/PEITS.2009.5406987

Filename

5406987