Title :
Research on Transient Model of IGBT
Author :
Zhu, Xianhui ; Cui, Shumei ; Shi, Nan ; Zhang, Shuo
Author_Institution :
Sch. of Electr. Eng. & Autom., Harbin Inst. & Technol., Harbin, China
Abstract :
Electromagnetic interference problem caused by fast voltage/current rate of switching components becomes more and more seriously, which effects electromagnetic compatibility of devices greatly. It is necessary to build the transient model of switching devices. In this paper, a simple method of IGBT modeling is proposed, which depends on the data provided by chip manual, without the requirements of complex experimental test. The model are verified by the comparison of simulation and experiment results in time and frequency domain, the consistence of which reveals the validity of the model under the frequency of conduction.
Keywords :
electromagnetic compatibility; electromagnetic interference; frequency-domain analysis; insulated gate bipolar transistors; semiconductor device models; time-domain analysis; IGBT; electromagnetic compatibility; electromagnetic interference problem; frequency domain; switching components; time domain; transient model; Analytical models; Capacitance; Insulated gate bipolar transistors; Mathematical model; Resistance; Switches; Transient analysis;
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0545-8
DOI :
10.1109/APPEEC.2012.6307368
