Watt level GaAs PHEMT power amplifiers 26 GHz and 40 GHz for wireless applications

Author

Sovero, Emilio A. ; Kwon, Youngwoo ; Deakin, Don S. ; Hong, John

Author_Institution

Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA

fYear

1999

fDate

1999

Firstpage

309

Lastpage

312

Abstract

The authors report on the design, fabrication and performance of 1 W amplifiers for 26 GHz and 40 GHz. The design approach uses standard MMIC elements: microstrip transmission lines, MIM capacitors, through-the-substrate vias for low impedance ground connection, two metal levels, air bridge crossovers and 75 μm substrates. The substrate material is grown by MBE, and for higher output power has double heterojunction channels. A Leica 10.6 electron beam lithography (EBL) machine defined the transistor gates. The gates are nominally 0.18 μm long. A plasma process that achieves excellent yield and reproducibility provides the gate recess

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; electron beam lithography; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit design; millimetre wave power amplifiers; 1 W; 26 GHz; 40 GHz; GaAs; Leica 10.6 electron beam lithography; MBE substrate material; MIM capacitors; MMIC elements; PHEMT power amplifiers; air bridge crossovers; design; double heterojunction channels; fabrication; gate recess; low impedance ground connection; microstrip transmission lines; plasma process; through-the-substrate vias; wireless applications; Bridges; Fabrication; Gallium arsenide; Impedance; MIM capacitors; MMICs; Microstrip; PHEMTs; Power amplifiers; Power transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 1999. RAWCON 99. 1999 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-5454-0

Type

conf

DOI

10.1109/RAWCON.1999.810992

Filename

810992