DocumentCode
3393558
Title
Space Charge Characteristics of ZnO Varistors after Pulse Degradation
Author
Zenghui Zheng ; Hang Cui ; Qian Wang ; Youping Tu
Author_Institution
Beijing Key Lab. of High Voltage & EMC, North China Electr. Power Univ., Beijing, China
fYear
2012
fDate
27-29 March 2012
Firstpage
1
Lastpage
4
Abstract
ZnO varistors are wildly used in power system and electronic system to protect equipments against surges and over-voltage. As there is none series gap in ZnO arresters, the ageing phenomenon of ZnO varistors has attracted great attention. In order to study the principle of pulse degradation of ZnO varistors, the thermally stimulated current (TSC) characteristic, voltage-current (U-I) and pulse electro-acoustic (PEA) characteristic of aged ZnO varistors have been investigated. The experimental results show that the trap level and trap charge increase as the impact time or impulse current increased; the TSC results show that there is ion migration during pulse degradation process of ZnO varistors, which is account for the drift of U-I characteristic curves. Based on the research results, a conclusion can be drawn that the pulse degradation of ZnO varistors is the consequence of thermal ageing and ion migration. The space charge characteristics of ZnO varistors provide a new view to study the pulse degradation mechanism of ZnO varistors.
Keywords
arresters; varistors; zinc compounds; PEA characteristic; TSC; U-I characteristic curves; ZnO; arresters; electronic system; equipment protection; impact time; impulse current; ion migration; power system; pulse degradation process; pulse electro-acoustic characteristic; space charge characteristics; thermal ageing; thermally stimulated current characteristic; trap charge; trap level; varistors; voltage-current characteristic; Aging; Degradation; Electrodes; Space charge; Temperature measurement; Varistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific
Conference_Location
Shanghai
ISSN
2157-4839
Print_ISBN
978-1-4577-0545-8
Type
conf
DOI
10.1109/APPEEC.2012.6307387
Filename
6307387
Link To Document