DocumentCode :
339401
Title :
Transimpedance gain modelling of optical receivers employing a pin photodiode and HBT distributed amplifier combination
Author :
Iqbal, Ahmer ; Darwazeh, Izzat Z.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fYear :
1999
fDate :
1999
Firstpage :
42430
Lastpage :
42438
Abstract :
In this paper we discuss how the general small-signal gain formulation reported in our earlier publication may be applied in order to arrive at an analytical expression for the transimpedance gain of arbitrarily terminated HBT distributed amplifier (DA) based optical receivers. This expression includes all of the major intrinsic and parasitic elements associated with HBTs and also incorporates the primary elements of p-i-n photodiodes. The accuracy of the transimpedance gain expression is assessed by comparison with results from simulations. Graphical results based on the derived expression are presented to show how the various HBT, distributed amplifier and photodiode parameters affect the transimpedance gain performance of optical receivers. The trends shown in these graphs are discussed in relation to the general circuit properties of the combined HBT DA and p-i-n photodiode system, with a view to providing a basic insight into the design of such receivers
Keywords :
optical receivers; HBT distributed amplifier; circuit properties; intrinsic elements; optical receivers; parasitic elements; pin photodiode; small-signal gain formulation; transimpedance gain modelling;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Opto-Electronic Interfacing at Microwave Frequencies (Ref. No. 1999/045), IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19990230
Filename :
771939
Link To Document :
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