Title :
IGBT modeling for analysis of complicated multi-IGBT Circuits
Author :
Yi, Deng ; Zhengming, Zhao ; Liqiang, Yuan
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
A new IGBT (insulated gate bipolar transistor) model for simulation of complicated multi-IGBT circuits is presented. Based on the gate charge and discharge behaviors of IGBT, it piecewise models the turn-on and -off transient of IGBT, and simulates the static characteristics with curve fitting method. With the key features of high simulation speed, easy parameters extraction and clear physical meaning, the model is available for various IGBTs and system level circuits. This paper describes the structure and equivalent circuit of the model in detail, implements it with the simulation tool of PSIM package, and determines the parameters of the model for an IGBT of FF300R12ME3 as an example. The accuracy of the model is verified by the comparison between the simulated and experimental results.
Keywords :
curve fitting; equivalent circuits; insulated gate bipolar transistors; semiconductor device models; FF300R12ME3; IGBT modeling; PSIM package; complicated multiIGBT Circuits; curve fitting method; easy parameter extraction; equivalent circuit; insulated gate bipolar transistor; Analytical models; Circuit simulation; Equivalent circuits; Insulated gate bipolar transistors; Intelligent transportation systems; MOSFET circuits; Power electronics; Power system modeling; Power system simulation; Power system transients; IGBT; PSIM; complicated circuit; model;
Conference_Titel :
Power Electronics and Intelligent Transportation System (PEITS), 2009 2nd International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4544-8
DOI :
10.1109/PEITS.2009.5407053
