DocumentCode :
3394790
Title :
In-situ deposited WSix polycide for high frequency transistor gate structures
Author :
Lu, Zhong ; Golonka, Laurence ; Elias, Russ ; Schenk, Ray
Author_Institution :
Motorola Inc., Mesa, AZ, USA
fYear :
1997
fDate :
10-12 Sep 1997
Firstpage :
257
Lastpage :
262
Abstract :
This paper describes the implementation of in-situ doped WSix polycide into a manufacturing environment for high frequency communication applications. Process matching, process integration considerations, and statistical characterization of process latitude are described. Outstanding device performance was achieved
Keywords :
CVD coatings; UHF transistors; semiconductor device metallisation; tungsten compounds; WSi; WSix polycide; communication device; high frequency transistor gate; in-situ deposition; manufacture; process integration; process latitude statistics; process matching; Adhesives; Cleaning; Contamination; Frequency; Hydrogen; Plasma chemistry; Semiconductor device manufacture; Silicides; Silicon; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location :
Cambridge, MA
ISSN :
1078-8743
Print_ISBN :
0-7803-4050-7
Type :
conf
DOI :
10.1109/ASMC.1997.630745
Filename :
630745
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3394790
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