• DocumentCode
    3394790
  • Title

    In-situ deposited WSix polycide for high frequency transistor gate structures

  • Author

    Lu, Zhong ; Golonka, Laurence ; Elias, Russ ; Schenk, Ray

  • Author_Institution
    Motorola Inc., Mesa, AZ, USA
  • fYear
    1997
  • fDate
    10-12 Sep 1997
  • Firstpage
    257
  • Lastpage
    262
  • Abstract
    This paper describes the implementation of in-situ doped WSix polycide into a manufacturing environment for high frequency communication applications. Process matching, process integration considerations, and statistical characterization of process latitude are described. Outstanding device performance was achieved
  • Keywords
    CVD coatings; UHF transistors; semiconductor device metallisation; tungsten compounds; WSi; WSix polycide; communication device; high frequency transistor gate; in-situ deposition; manufacture; process integration; process latitude statistics; process matching; Adhesives; Cleaning; Contamination; Frequency; Hydrogen; Plasma chemistry; Semiconductor device manufacture; Silicides; Silicon; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
  • Conference_Location
    Cambridge, MA
  • ISSN
    1078-8743
  • Print_ISBN
    0-7803-4050-7
  • Type

    conf

  • DOI
    10.1109/ASMC.1997.630745
  • Filename
    630745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3394790