Title :
An analytical model for AlGaAs/GaAs HEMTs at large gate voltage
Author :
Aziz, M.A. ; El-Banna, M.
Author_Institution :
Egyptian Armed Forces, Egypt
Abstract :
An accurate analytical model for HEMTs at large gate voltage is presented. A developed self-consistent charge-control model is used to calculate the electron density in both 2DEG and AlGaAs channels. An analytical function, originally used to calculate the electron concentration in 2DEG, is proposed to be used for channel electrons in AlGaAs. A single analytical expression for the drain currents in AlGaAs and in 2DEG layers is obtained. Detailed analysis of different modes of operation is also presented. The theoretical predictions of the model have been confirmed through the obtained agreement with the experimental data available in the literature
Keywords :
III-V semiconductors; aluminium compounds; electron density; gallium arsenide; high electron mobility transistors; semiconductor device models; 2DEG channels; AlGaAs-GaAs; HEMTs; III-V semiconductors; analytical model; channel electrons; drain currents; electron density; gate voltage; self-consistent charge-control model; Analytical models; Circuit noise; Digital circuits; Electrons; Gallium arsenide; HEMTs; Low voltage; MODFETs; Microwave devices; Predictive models;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Conference_Location :
Sacramento, CA
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.662322
