• DocumentCode
    3394845
  • Title

    A behavioural nonlinear SiGe-HBT model based on Gummel-Poon topology

  • Author

    Megherbi, S. ; Yahiaoui, C. ; Pone, J.F.

  • Author_Institution
    Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
  • Volume
    2
  • fYear
    1997
  • fDate
    3-6 Aug. 1997
  • Firstpage
    1314
  • Abstract
    We aimed at building an evolutive Gummel-Poon model dedicated to design of integrated SiGe-HBT cells, easy to incorporate in electrical simulators, and able to take into account the various types of carrier transport that are liable to occur in the behaviour of Si/Si1-xGex/Si HBT. In order to test the model, we compared the theoretical records with experimental published results. An interesting feature of this model is that it provides the electrical operation of SiGe-HBT devices derived from technological and geometrical parameters.
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; Gummel-Poon topology; HBT model; Si-SiGe-Si; behavioural nonlinear model; carrier transport; electrical simulators; geometrical parameters; Binary search trees; Breakdown voltage; Buildings; Diodes; Electron emission; Electronic mail; Heterojunction bipolar transistors; Polarization; Solid modeling; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
  • Print_ISBN
    0-7803-3694-1
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1997.662323
  • Filename
    662323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3394845