Title :
Linear bilateral CMOS resistor for neural-type circuits
Author :
Sellami, L. ; Singh, S.K. ; Newcomb, R.W. ; Moon, G.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
A previous CMOS bilateral linear resistor is analyzed and shown to be reducible from four to two transistors with improved linearity. This is developed for neural-type circuits to allow its use in emulating both excitatory and inhibitory voltage variable synapses. Simulation results using parameters of MOSIS transistors are presented to verify the theory.
Keywords :
CMOS analogue integrated circuits; VLSI; analogue processing circuits; neural chips; resistors; MOSIS transistors; excitatory voltage variable synapse; inhibitory voltage variable synapse; linear bilateral CMOS resistor; linearity; neural-type circuits; Batteries; Circuit simulation; Laboratories; MOS devices; MOSFETs; Moon; Resistors; Uniform resource locators; Very large scale integration; Voltage control;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.662327
