• DocumentCode
    3394966
  • Title

    Investigation of the effects of nano-filler on dielectric properties of epoxy based composites

  • Author

    Shi, Huicheng ; Gao, Naikui ; Jin, Haiyun ; Zhang, Gang ; Peng, Zongren

  • Author_Institution
    State Key Lab. of Electr. Insulation & Power Equip., Xi´´an Jiaotong Univ., Xi´´an, China
  • fYear
    2009
  • fDate
    19-23 July 2009
  • Firstpage
    804
  • Lastpage
    807
  • Abstract
    In this paper, epoxy resin based composites filled with nano-Al2O3 and nano-SiO2 individually were fabricated. The relationships between the dielectric properties and fillers properties (contents and particle size etc.) were investigated. The results showed that, for nano-SiO2 filled epoxy, relative permittivity (epsivr) and loss factor (tandelta) increased obviously when filler content was lower than about 0.1 wt.%, continue to increase filler content, it appeared a minmium value while filler increased to 0.3 wt.%, and above this loading, epsivr and tandelta start to increase again increased with increasing filler content. While for the composites with nanosized Al2O3, a similar phenomenon was observed. The tandelta of epoxy/ micro Al2O3 composites was larger than that of epoxy/ nano Al2O3 composite. Both epsivr and tandelta of Al2O3 filled composites were larger than that of SiO2 filled composites for its high inherent permittivity.
  • Keywords
    alumina; dielectric losses; filled polymers; nanocomposites; nanofabrication; nanoparticles; permittivity; silicon compounds; Al2O3; SiO2; dielectric properties; epoxy resin based composites; loss factor; nanofiller effects; nanosized composites; relative permittivity; Accelerated aging; Dielectric losses; Dielectric materials; Dielectrics and electrical insulation; Epoxy resins; Laboratories; Nanoparticles; Permittivity; Polymers; Tunneling; dielectric property; epoxy resin; nano-filler; nanocomposite;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
  • Conference_Location
    Harbin
  • Print_ISBN
    978-1-4244-4367-3
  • Electronic_ISBN
    978-1-4244-4368-0
  • Type

    conf

  • DOI
    10.1109/ICPADM.2009.5252175
  • Filename
    5252175