Suspended Greek cross test structures for measuring the sheet resistance of non-standard cleanroom materials

Author

Enderling, Stefan ; Brown, C.L., III ; Smith, S. ; Dicks, M.H. ; Stevenson, J.T.M. ; Ross, A.W.S. ; Mitkova, M. ; Kozicki, M.N. ; Walton, A.J.

Author_Institution

Sch. of Eng. & Electron., Edinburgh Univ., UK

fYear

2005

fDate

4-7 April 2005

Firstpage

1

Lastpage

4

Abstract

A novel method is reported to measure the sheet resistance of materials that are incompatible with a CMOS process, using suspended polysilicon Greek cross test structures. To demonstrate the technique, gold (Au) was blanket evaporated in various thicknesses onto the test structures and the sheet resistance extracted. Sheet resistances ranging from 0.30Ω/□to 0.10Ω/□were measured for the deposited Au films on Greek cross structures with arm widths ranging between 5 and 20 μm. The extracted resistivity of 4.85×10^-8Ωm agrees with values found in the literature (3.0×10^-8Ωm-5.0×10^-8Ωm) demonstrating that the structures are fully capable of measuring sheet resistance of blanket deposited films.

Keywords

electric resistance measurement; gold; 3.0×10^-8 to 5.0×10^-8 ohmm; 4.85×10^-8 ohmm; 5 to 20 micron; Au; CMOS process incompatible materials; blanket deposited films; cross structure arm widths; nonstandard cleanroom materials; resistivity extraction; sheet resistance measurement; suspended Greek cross test structures; Area measurement; Current measurement; Electrical resistance measurement; Force measurement; Gold; Materials testing; Pollution measurement; Semiconductor films; Sheet materials; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on

Print_ISBN

0-7803-8855-0

Type

conf

DOI

10.1109/ICMTS.2005.1452202

Filename

1452202