DocumentCode
3395121
Title
The breakdown characteristic of Al2 O3 /PI by light transmittance
Author
Liu, Xiaoxu ; Yin, Jinghua ; Bu, Wenbin ; Song, Yilei ; Jia, Pengfei ; Fan, Yong
Author_Institution
Key Lab. of Eng. Dielectric & Its Applic., Harbin Univ. of Sci. & Technol., Harbin, China
fYear
2009
fDate
19-23 July 2009
Firstpage
826
Lastpage
828
Abstract
Inorganic nanohybrid polyimide (PI) film has great potential for applications in the areas of electrics and electronics because of its excellent electrical performance, such as the resistance to aging and corona and so on. The breakdown strength of insulating materials is generally measured by DC, AC or impulse voltage. However, the influence of laser irradiation to Al2O3/ PI film has not been reported so far. In this paper, the Al2O3/ PI film with different Al2O3 component is irradiated by semiconductor laser, and the output power is 100 mW. The influences of some factors (such as the distance of sample and laser, irradiation time) on luminousness have been studied. The experimental results show that the light transmittance of the films and the size of the breakdown hole are affected by the Al2O3 component in films. In this paper, the relationship between breakdown performance and light transmittance is researched and the method of the breakdown performance of Al2O3/ PI film represented by light transmittance is also investigated.
Keywords
aluminium compounds; dielectric materials; electric breakdown; insulating materials; light transmission; nanocomposites; scanning electron microscopy; Al2O3; breakdown characteristic; inorganic nanohybrid polyimide film; insulating materials; light transmittance; scanning electron microscopy; Aging; Breakdown voltage; Corona; Electric breakdown; Electric resistance; Insulation; Optical materials; Polyimides; Semiconductor films; Semiconductor lasers; Al2 O3 /PI film; breakdown characteristic; laser; light transmittance;
fLanguage
English
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location
Harbin
Print_ISBN
978-1-4244-4367-3
Electronic_ISBN
978-1-4244-4368-0
Type
conf
DOI
10.1109/ICPADM.2009.5252193
Filename
5252193
Link To Document