Title :
A test structure to measure sheet resistances of highly-doped-drain and lightly-doped-drain in CMOSFET
Author :
Ohzone, T. ; Okada, K. ; Morishita, T. ; Komoku, K. ; Matsuda, T. ; Iwata, H.
Author_Institution :
Dept. of Commun. Eng., Okayama Prefectural Univ., Japan
Abstract :
A test structure to separately measure sheet resistances of highly-doped-drain (HDD) and lightly-doped-drain (LDD) in LDD-type CMOSFET with various gate spaces S having sub-100 nm sidewalls was proposed. The reciprocal of source/drain-resistance R-1 versus S characteristics show the unstable resistance variations in the narrower S regions, which suggest that the micro-loading or size effects seriously affect the characteristics.
Keywords :
MOSFET; electric resistance measurement; LDD-type CMOSFET; highly doped drain; lightly doped drain; sheet resistances; source/drain-resistance reciprocal; test structure; CMOSFETs; Current measurement; Electric variables measurement; Electrical resistance measurement; Electronic equipment testing; Etching; Length measurement; MOSFET circuits; Position measurement; Velocity measurement;
Conference_Titel :
Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
Print_ISBN :
0-7803-8855-0
DOI :
10.1109/ICMTS.2005.1452224
