DocumentCode
3395541
Title
Design and analysis of a TB/sec memory system
Author
Beyene, Wendemagegnehu T. ; Madden, Chris ; Kim, Namhoon ; Lee, Rae-Chang ; Perego, Rich ; Secker, Dave ; Yuan, Chuck ; Vaidyanath, Arun ; Chang, Ken
Author_Institution
Rambus Inc., Los Altos, CA
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
21
Lastpage
24
Abstract
The design and analysis of a Terabyte per second (TB/sec) memory system is presented. The interface technology utilizes a bi-directional low-swing differential signaling with a data transfer rate of 16 Gbps/pair. The memory system uses asymmetrical architecture where the timing adjustment and equalization circuits for both memory WRITE and READ are on the controller to reduce the memory cost. This paper describes the design and analysis employed to develop the memory interface using conventional and low-cost interconnect technologies. The design and characterization of the prototype system at component and system-level are presented and model to hardware correlations are discussed at component and system levels. System analysis is used to optimize and predict the yield of the system, to calculate system timing and voltage margins, and to verify targeted bit-error-rate (BER).
Keywords
error statistics; integrated circuit design; integrated circuit interconnections; integrated memory circuits; timing circuits; bi-directional low-swing differential signaling; bit error rate; data transfer rate; equalization circuits; interconnect technologies; interface technology; terabyte per second memory system; timing adjustment; Bidirectional control; Bit error rate; Control systems; Costs; Hardware; Integrated circuit interconnections; Prototypes; Read-write memory; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging, 2008 IEEE-EPEP
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-2873-1
Type
conf
DOI
10.1109/EPEP.2008.4675866
Filename
4675866
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