New extraction method for gate bias dependent series resistance in nanometric double gate transistors

Author

Cros, Antoine ; Harrison, Samuel ; Cerutti, Robin ; Coronel, Philippe ; Ghibaudo, Gérard ; Brut, Hugues

Author_Institution

STMicroelectron., Crolles, France

fYear

2005

fDate

4-7 April 2005

Firstpage

69

Lastpage

74

Abstract

Double gate type transistors are needed for the ultimate integration on silicon, and thus extraction techniques have to be adapted. In this paper, the influence of the series resistance on the extrinsic mobility reduction parameters is analysed, in the case of a resistance varying with the gate bias. It is evidenced that both the low field and high field parameters are impacted. Then, a new approach is proposed for the extraction of the series resistance variation with the gate voltage, and applied to the analysis of gate-all-around transistors series resistance, with doped and undoped body.

Keywords

carrier mobility; electric resistance measurement; field effect transistors; nanoelectronics; semiconductor device measurement; semiconductor device models; doped body transistors; extrinsic mobility reduction parameters; gate bias dependent series resistance; gate bias voltage dependent resistance; gate-all-around transistors; high field parameters; low field parameters; nanometric double gate transistors; series resistance extraction method; undoped body transistors; Attenuation; CMOS technology; Contact resistance; Immune system; Remotely operated vehicles; Semiconductor films; Silicides; Silicon; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on

Print_ISBN

0-7803-8855-0

Type

conf

DOI

10.1109/ICMTS.2005.1452225

Filename

1452225