Switching losses of the new SIRET-a comparison to other medium-power devices

Author

Schmid, Horst

Author_Institution

Siemens AG, Munich, West Germany

fYear

1988

fDate

2-7 Oct. 1988

Firstpage

597

Abstract

The SIRET is an n-p-n power transistor with a large safe operating area for applications up to 20 kHz and more. Measurements of the power dissipation are presented and compared to measurements on other power devices. The results were obtained by thermal measurements and compared to the results of the calculation of the product of voltage and current as a function of time. The calculation requires the correction for the time delay introduced by the current probe and preamplifier as well as signal distortions introduced by unavoidable parasitic elements. The results of switchable current vs. frequency were found at constant power dissipation on four different devices: a SIRET, two IGBTs (insulated-gate bipolar transistors), and a power MOSFET. The most suitable application areas of these devices are discussed.<>

Keywords

bipolar transistors; losses; power transistors; semiconductor switches; IGBT; SIRET; insulated-gate bipolar transistors; medium-power devices; n-p-n power transistor; power MOSFET; power dissipation; switchable current; switching losses; thermal measurements; Current measurement; Delay effects; Distortion measurement; Insulated gate bipolar transistors; Power dissipation; Power measurement; Power transistors; Switching loss; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1988., Conference Record of the 1988 IEEE

Conference_Location

Pittsburgh, PA, USA

Type

conf

DOI

10.1109/IAS.1988.25122

Filename

25122