DocumentCode :
3395821
Title :
On-chip oscilloscope for signal integrity characterization of interconnects in 130nm CMOS technology
Author :
Milosevic, Pavle ; Schutt-Ainé, José E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
65
Lastpage :
68
Abstract :
In this work, the design of a prototype chip for signal integrity characterization in 130 nm CMOS technology is discussed. Measurement results for several interconnect configurations are presented. The goal is to accurately capture and characterize the transmission line properties of deep-submicron interconnects in order to generate guidelines for multi-GHz clock rate designs.
Keywords :
CMOS analogue integrated circuits; oscilloscopes; CMOS technology; deep-submicron interconnection; multi-GHz clock rate designs; prototype chip; signal integrity characterization; size 130 nm; Buffer storage; CMOS technology; Delay effects; Integrated circuit interconnections; Oscilloscopes; Sampling methods; Semiconductor device measurement; Switches; Switching circuits; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Performance of Electronic Packaging, 2008 IEEE-EPEP
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2873-1
Type :
conf
DOI :
10.1109/EPEP.2008.4675878
Filename :
4675878
Link To Document :
بازگشت