DocumentCode
3395821
Title
On-chip oscilloscope for signal integrity characterization of interconnects in 130nm CMOS technology
Author
Milosevic, Pavle ; Schutt-Ainé, José E.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
65
Lastpage
68
Abstract
In this work, the design of a prototype chip for signal integrity characterization in 130 nm CMOS technology is discussed. Measurement results for several interconnect configurations are presented. The goal is to accurately capture and characterize the transmission line properties of deep-submicron interconnects in order to generate guidelines for multi-GHz clock rate designs.
Keywords
CMOS analogue integrated circuits; oscilloscopes; CMOS technology; deep-submicron interconnection; multi-GHz clock rate designs; prototype chip; signal integrity characterization; size 130 nm; Buffer storage; CMOS technology; Delay effects; Integrated circuit interconnections; Oscilloscopes; Sampling methods; Semiconductor device measurement; Switches; Switching circuits; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging, 2008 IEEE-EPEP
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-2873-1
Type
conf
DOI
10.1109/EPEP.2008.4675878
Filename
4675878
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