Title :
Short-circuit capability of IGBT (COMFET) transistors
Author :
Rogne, Terje ; Ringheim, Nils Arild ; Ødegard, Bjørn ; Eskedal, Jan ; Undeland, Tore M.
Author_Institution :
Norwegian Res. Inst. of Electr. Supply, Trondheim, Norway
Abstract :
The IGBT (insulated-gate bipolar transistor) or COMFET (conductivity-modulated field-effect transistor) has the same low drive requirements as for MOSFETs and the same carrier injection as a bipolar transistor, giving a low voltage drop even at high breakdown voltage ratings. The authors study the short-circuit capability. The high-current level or active region is found for different IGBTs. The short-circuit endurance time is investigated. The measurements show clear differences between the IGBTs from different manufacturers. The gate voltage is shown to be an important parameter.<>
Keywords :
bipolar transistors; insulated gate field effect transistors; power transistors; short-circuit currents; COMFET; IGBT; active region; conductivity-modulated field-effect transistor; gate voltage; high-current level; insulated-gate bipolar transistor; short-circuit capability; short-circuit endurance time; FETs; Insulated gate bipolar transistors; Insulation; Low voltage; MOSFETs; Manufacturing;
Conference_Titel :
Industry Applications Society Annual Meeting, 1988., Conference Record of the 1988 IEEE
Conference_Location :
Pittsburgh, PA, USA
DOI :
10.1109/IAS.1988.25125
