Title :
Transmission line model of base spreading resistance at high currents
Author :
Lin, H.C. ; Page, D.J. ; Ostop, J.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
The base resistance of a bipolar transistor at high currents has been analyzed using a transmission-line model and taking the current-crowding effect into account. A closed-form solution has been obtained and shows that the collector current dependency on V/sub B,E/ is proportional to exp(V/sub B,E//2V/sub T/). This ideology factor of 2 for collector current is usually attributed to conductivity modulation at high currents. Analysis shows that the current crowding can also contribute to the nonunity ideology factor. The analysis is in agreement with experimental results.<>
Keywords :
bipolar transistors; power transistors; semiconductor device models; base resistance; base spreading resistance; bipolar transistor; closed-form solution; collector current dependency; conductivity modulation; current-crowding effect; high currents; ideology factor; transmission-line model; Bipolar transistors; Closed-form solution; Conductivity; Proximity effect; Transmission lines;
Conference_Titel :
Industry Applications Society Annual Meeting, 1988., Conference Record of the 1988 IEEE
Conference_Location :
Pittsburgh, PA, USA
DOI :
10.1109/IAS.1988.25127
