Title :
Characterization of GTOs for soft switching applications
Author :
Skibinski, G.L. ; Divan, D.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
An examination is made of modifications possible in GTO (gate-turn-off) specifications as a result of application in soft switching topologies. Turn-off is characterized as a function of (dv/dt, di/dt) controlled by the external resonant elements and gate drive circuits. Turn-on is characterized for low-voltage switching and external gate drive circuit influence. Device interaction with the various operating modes of the soft switching topologies is examined.<>
Keywords :
semiconductor switches; thyristors; GTO; external resonant elements; gate drive circuits; gate-turn-off; low-voltage switching; soft switching applications; thyristor; turn-on; Circuit topology; RLC circuits; Resonance; Switching circuits;
Conference_Titel :
Industry Applications Society Annual Meeting, 1988., Conference Record of the 1988 IEEE
Conference_Location :
Pittsburgh, PA, USA
DOI :
10.1109/IAS.1988.25130
