Fast recovery epitaxial diodes (FRED´s)

Author

Wolley, E.Duane ; Van Dell, W. Ron

Author_Institution

Powerex Inc., Youngwood, PA, USA

fYear

1988

fDate

2-7 Oct. 1988

Firstpage

655

Abstract

A p/sup ++/nn/sup +/n/sup ++/ diode has been developed for high-frequency application. The p/sup ++/n junction is very abrupt as a result of a 1 mu m diffusion. Two methods of carrier lifetime control are used. Platinum (Pt) is diffused from the p/sup ++/ side of the diode and protons are implanted 1-2 mu m deep, also from the p/sup ++/ side of the diode. The acronym selected for the device is FRED (fast-recovery epitaxial diode). The diodes are rated at 600 V (avalanche breakdown 700-900 V). This diode construction yields devices with fast and soft reverse recovery characteristics. Computer modeling results for the device structure used in simulated test circuits are described and compared to experimental results. The modeling results show that the peak forward recovery voltages are independent of the carrier lifetime for very high di/dt in diode turn-on. For very high di/dt, the peak forward recovery voltage is the current times the unmodulated base resistance of the diode.<>

Keywords

semiconductor device models; semiconductor diodes; 600 V; FRED; Pt diffusion; carrier lifetime control; diode turn-on; fast-recovery epitaxial diode; high-frequency application; modeling; peak forward recovery voltages; proton implantation; soft reverse recovery; unmodulated base resistance; Avalanche breakdown; Charge carrier lifetime; Circuit simulation; Circuit testing; Computational modeling; Diodes; Platinum; Protons; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1988., Conference Record of the 1988 IEEE

Conference_Location

Pittsburgh, PA, USA

Type

conf

DOI

10.1109/IAS.1988.25132

Filename

25132