DocumentCode :
3396008
Title :
Properties of Hf/Zr doped (Na1/2Bi1/2TiO3) relaxor-ferroelectric ceramics under bias electrical field
Author :
Kirsever, Derya ; Yilmaz, Hamza
Author_Institution :
Dept. Metall. & Mater. Eng., Sakarya Univ., Sakarya, Turkey
fYear :
2013
fDate :
21-25 July 2013
Firstpage :
175
Lastpage :
178
Abstract :
In this study, Hafnium or Zirconium doped grain oriented (Na1/2Bi1/2)TiO3 (NBT) ceramics with <;001> orientation were fabricated by Templated Grain Growth (TGG) method using anisotropically shaped SrTiO3 template particles. These molten salt synthesized SrTiO3 platelets were tape cast with calcined NBT powder, and sintered at 1200°C for 6 h. Texture fractions up to 70% have been obtained. Also, electromechanical properties of Hf4+ and Zr4+ doped NBT ceramics under electrical bias were studied.
Keywords :
bismuth compounds; calcination; electromechanical effects; ferroelectric ceramics; grain growth; hafnium; relaxor ferroelectrics; sintering; sodium compounds; tape casting; texture; zirconium; Na0.5Bi0.5TiO3:Hf; Na0.5Bi0.5TiO3:Zr; anisotropically shaped SrTiO3 template particles; bias electrical field; calcination; electromechanical properties; hafnium doped grain oriented ceramics; relaxor-ferroelectric ceramics; sintering; tape casting; templated grain growth method; texture; zirconium doped grain oriented ceramics; Ceramics; Density measurement; Dielectrics; Electric fields; Epitaxial growth; Heating; electrical properties; lead-free; relaxor-ferroelectrics; sodium bismuth titanate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
Conference_Location :
Prague
Type :
conf
DOI :
10.1109/ISAF.2013.6748654
Filename :
6748654
Link To Document :
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