Title :
Enhancing the performance of organic thin-film transistor using a buffer layer
Author :
Wu, Chung-Ming ; Su, Shui-Hsiang ; Kung, Shu-Yi ; Yokoyama, Meiso ; Huang, Tsung-Syun ; Su, Yan-Kuin
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
Abstract :
Vanadium oxide (V2O5) and 4,4\´,4"-tris(N-3-methylphenyl-N-phenyl-amino)-triphen ylamine (m-MTDATA) doped V2O5 film, respectively, is used as a buffer layer between source/drain electrodes and organic active layer in organic thin film transistors (OTFTs) to improve the electrical characteristics. Results show that the saturation current, mobility, threshold voltage, and on/off ratio are improved of the proposed OTFT with a buffer layer, especially on/off ratio is about five times than that of the device without a buffer layer.
Keywords :
buffer layers; organic field effect transistors; thin film transistors; vanadium compounds; V2O5; buffer layer; electrical characteristic; organic active layer; organic thin-film transistor; saturation current; source-drain electrodes; threshold voltage; Buffer layers; Dielectric materials; Dielectric substrates; Electric variables; Electrodes; Glass; Indium tin oxide; Organic thin film transistors; Pentacene; Thin film transistors; OTFTs; buffer layer; on/off ratio;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
DOI :
10.1109/ICPADM.2009.5252262
