Title :
Speed - accuracy trade-off for measurement and characterization of the matching performance of SiGe:C HBTs, applied to a 200 GHz technology
Author :
Choi, L.J. ; Venegas, R. ; Decoutere, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this paper, the trade-off between time and accuracy for measurement of the matching performance of bipolar transistors has been investigated. After determination of the limits of the hardware setup, the matching behavior of 200 GHz SiGe:C HBTs is characterized over a wide range of dimensions and biasing conditions. The focus is put on measurements in the low and high current region. It reveals the unique bias dependence of bipolar current mismatch in the high current region.
Keywords :
Ge-Si alloys; carbon; electric current measurement; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor materials; 200 GHz; HBT biasing conditions; HBT characterization; HBT dimensions; SiGe:C; bipolar current mismatch bias dependence; emitter resistance; high current region; low current region; matching performance measurement; speed/accuracy trade-off; Bipolar transistors; Bonding; Current measurement; Force measurement; Hardware; Heterojunction bipolar transistors; Performance evaluation; Testing; Time measurement; Velocity measurement;
Conference_Titel :
Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
Print_ISBN :
0-7803-8855-0
DOI :
10.1109/ICMTS.2005.1452248
