DocumentCode :
3396149
Title :
A novel stopband-enhanced EBG planes using an Embedded Slow-wave Structure in Low-cost RF-SiP
Author :
Hsieh, Chia-Yuan ; Chuang, Hao-Hsiang ; Wang, Ting-Kuang ; Wang, Chen-Chao ; Cheng, Hung-Hsiang ; WU, Yei-Shen ; Chiu, Chi-Tsung ; Hung, Chih-Pin ; Wu, Tzong-Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
131
Lastpage :
134
Abstract :
Based on the slow-wave concept, an EBG power planes with stopband enhancement is proposed by using ground surface perturbation lattice (GSPL) between the coplanar EBG power and ground planes. This structure has 73% and 100% stopband enhancement, respectively, compared to the conventional coplanar and mush-room typed EBG planes. A test sample of 16 unit-cells on a 40 mm square substrate is fabricated with 4 GHz stopband and is validated both by simulation and experiment. It is a low-cost design in SiP because no high-K material is required. Two test chips, C-band LNA (5.6 GHz) and off-chip digital drivers (1.3 GHz), is designed and integrated on the EBG substrate. In the chip-package co-simulation, over 40 dB suppression for the 1.3 GHz harmonics noise on the LNA output is seen for the proposed EBG planes.
Keywords :
integrated circuit design; integrated circuit testing; low noise amplifiers; microwave amplifiers; photonic band gap; system-in-package; C-band LNA; chip-package co-simulation; coplanar-typed EBG planes; embedded slow-wave structure; frequency 1.3 GHz; frequency 4 GHz; ground surface perturbation lattice; harmonics noise; high-K material; low-cost RF-SiP; mush-room typed EBG planes; off-chip digital drivers; stopband-enhanced EBG planes; Bandwidth; Cutoff frequency; Inductance; Joining processes; Lattices; Metamaterials; Periodic structures; Radio frequency; Resonance; Semiconductor device noise; EBG; Power integrity; RF-SiP;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Performance of Electronic Packaging, 2008 IEEE-EPEP
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2873-1
Type :
conf
DOI :
10.1109/EPEP.2008.4675895
Filename :
4675895
Link To Document :
بازگشت