Title :
Low-FOM planar MOSFET
Author :
Cuixia, Wang ; Hongjin, Kan ; Feng, Cen ; Youling, Yu
Author_Institution :
Inst. of Semicond. & Inf. Technol., Tongji Univ., Shanghai, China
Abstract :
Low FOM (Figure-of-merit) planar MOSFET is presented in this paper. The p-base of the developed MOSFET is formed by self-aligned ion implanted. Only four masks is used to fabrication while the performance of the developed MOSFET is better than the present conventional MOSFET. The optimized 20V rated MOSFET exhibits about 7.8mΩ·mm2 specific on-resistance, 1.2nC·mm2 and 3.4 nC·mm2 gate-drain charge and gate charge respectively. There is a reduction of 57% in the Figure of Merit.
Keywords :
Doping; Electrodes; Etching; Fabrication; Immune system; Implants; Industrial electronics; MOSFET circuits; Power MOSFET; Switches; Breakdown voltage; FOM (figure of merit); gate-drain charge; specific on-resistance (Ron,sp);
Conference_Titel :
Industrial Mechatronics and Automation (ICIMA), 2010 2nd International Conference on
Conference_Location :
Wuhan, China
Print_ISBN :
978-1-4244-7653-4
DOI :
10.1109/ICINDMA.2010.5538272
