• DocumentCode
    3396338
  • Title

    Low-FOM planar MOSFET

  • Author

    Cuixia, Wang ; Hongjin, Kan ; Feng, Cen ; Youling, Yu

  • Author_Institution
    Inst. of Semicond. & Inf. Technol., Tongji Univ., Shanghai, China
  • Volume
    2
  • fYear
    2010
  • fDate
    30-31 May 2010
  • Firstpage
    460
  • Lastpage
    463
  • Abstract
    Low FOM (Figure-of-merit) planar MOSFET is presented in this paper. The p-base of the developed MOSFET is formed by self-aligned ion implanted. Only four masks is used to fabrication while the performance of the developed MOSFET is better than the present conventional MOSFET. The optimized 20V rated MOSFET exhibits about 7.8mΩ·mm2 specific on-resistance, 1.2nC·mm2 and 3.4 nC·mm2 gate-drain charge and gate charge respectively. There is a reduction of 57% in the Figure of Merit.
  • Keywords
    Doping; Electrodes; Etching; Fabrication; Immune system; Implants; Industrial electronics; MOSFET circuits; Power MOSFET; Switches; Breakdown voltage; FOM (figure of merit); gate-drain charge; specific on-resistance (Ron,sp);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Mechatronics and Automation (ICIMA), 2010 2nd International Conference on
  • Conference_Location
    Wuhan, China
  • Print_ISBN
    978-1-4244-7653-4
  • Type

    conf

  • DOI
    10.1109/ICINDMA.2010.5538272
  • Filename
    5538272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3396338