Title :
Temperature characteristics of SnO2∶F transparent conductive thin film
Author :
Liu, Hong ; Li, Haowen ; Chen, Xiao
Author_Institution :
Sch. of Autom. & Inf. Eng., Xi´´an Univ. of Technol., Jinhua, China
Abstract :
SnO2 transparent conductive thin film has been widely used in the electrodes of solar cell, gas sensor, and heating field etc. This film can be easily prepared on the surface of glass, quartz, porcelain etc. at high temperature by spraying SnCl4 solution. We prepared SnO2:F film by using the ultrasonic spray pyrolysis. However, the resistance of the film will become unstable when the temperature is over 400degC, this weakness blocked the application of SnO2 film as a thermoelectric materials. We studied the stability of SnO2:F thin film at different temperature ranges. The conductivity of the film changed slightly when the temperature was below 200degC. When the film worked at the temperature interval of 200 to 600degC, its conductivity would become lower and lower. And the conductivity would increase when the temperature was higher than 600degC and lower than 700degC. If the temperature was higher than 800degC, the film´s resistance would rise acutely, and could not be reduced, because the thin film had been destroyed. According to the foregoing phenomena, we developed an annealing technology, and the resistance of the film treated with this technology would be relatively stable below 600degC.
Keywords :
annealing; conducting materials; dielectric thin films; electrical conductivity; fluorine; pyrolysis; thermal spraying; thermoelectric devices; tin compounds; ultrasonic applications; SnO:F; annealing technology; spraying solution; temperature 200 degC to 600 degC; thermoelectric materials; transparent conductive thin film; ultrasonic spray pyrolysis; Conductive films; Conductivity; Electrodes; Gas detectors; Photovoltaic cells; Solar heating; Spraying; Surface resistance; Temperature sensors; Transistors; SnO2∶F; anneal; resistance; temperature;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
DOI :
10.1109/ICPADM.2009.5252282