DocumentCode :
3396485
Title :
A new method for precise evaluation of dynamic recovery of negative bias temperature instability
Author :
Aota, S. ; Fujii, S. ; Jin, Z. ; Ito, Y. ; Utsumi, K. ; Morifuji, E. ; Yamada, S. ; Matsuoka, E. ; Noguchi, T.
Author_Institution :
Syst. LSI Div. I, Toshiba Corp., Semicond. Co., Japan
fYear :
2005
fDate :
4-7 April 2005
Firstpage :
197
Lastpage :
199
Abstract :
It has been reported that the dynamic recovery of drain current (Id) takes place soon after the stress applied on the gate is removed during a MOSFET negative bias temperature instability (NBTI) experiment. This phenomenon makes it very difficult to estimate the NBTI degradation of Id (ΔId) correctly. The paper presents a new characterization method in which the effect of the dynamic recovery is quantitatively taken into account to estimate ΔId precisely.
Keywords :
MOS integrated circuits; MOSFET; electric current; electric potential; parameter estimation; thermal stability; degradation estimation; drain current; dynamic recovery; gate stress; large-scale-integrated devices; measurement system; negative bias temperature instability; Degradation; Insulation; Large scale integration; MOSFETs; Negative bias temperature instability; Niobium compounds; Stress measurement; Time measurement; Titanium compounds; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
Print_ISBN :
0-7803-8855-0
Type :
conf
DOI :
10.1109/ICMTS.2005.1452262
Filename :
1452262
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3396485
بازگشت