DocumentCode
3396651
Title
Utilizing low loss dielectric material for high performance DRAM window-BGA design
Author
Cheng, Hung-Hsiang ; Huang, Chih-Yi ; Wang, Chen-Chao ; Chiu, Chi-Tsung ; Hung, Chih-Pin
Author_Institution
Electr. Lab., Adv. Semicond. Eng., Inc., Kaohsiung
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
263
Lastpage
266
Abstract
The high performance window-BGA for a high speed dynamic random access memory has been designed. In this paper, low loss material was studied and adopted in order to improve the electrical performance in organic substrates. The specific test patterns were designed to evaluate the dielectric loss of different materials. Furthermore, applied the low loss material on DRAM substrate design, and analyzed the high-frequency response to verify the electrical performance between general and low loss dielectric materials. Lastly, the actually function test was performed to distinguish speed grade and verify the performance improvement.
Keywords
DRAM chips; ball grid arrays; dielectric losses; dielectric materials; ball grid arrays; dielectric loss; dielectric materials; dynamic random access memory; organic substrates; DRAM chips; Dielectric losses; Dielectric materials; Dielectric substrates; Materials testing; Organic materials; Performance analysis; Performance evaluation; Performance loss; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging, 2008 IEEE-EPEP
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-2873-1
Type
conf
DOI
10.1109/EPEP.2008.4675930
Filename
4675930
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