Low Noise Amplifier Design Using 0.35 μm SiGe BiCMOS Technology for WLAN/WiMax Applications

This paper presents a design methodology of a low noise and low power fully-integrated LNA, targeted to all the three bands of IEEE 802.11a WLAN applications in the 5-6 GHz band and using 0.35 μm SiGc BiCMOS HBT technology. We emphasized in this paper the importance extraction of parasitic components through the use of electromagnetic simulations, which is usually ignored in the literature of similar works/research when reporting noise figure. Finally, we have obtained a SiGe HBT on-chip matched LNA, exhibiting NF of 2.75 dB, gain of ≫15 dB, input return loss of ≪ -15 dB, output return loss of ≪ -10 dB. The circuit consumes only 10.6 mVV under 3.3V supply voltage. The circuit die area is 595 x 925 μm², including pads.