• DocumentCode
    3396732
  • Title

    Realization and characterization of manganese doped BST thin films for reflectarray applications

  • Author

    Nadaud, Kevin ; Borderon, Caroline ; Pavy, Sabrina ; Gundel, Hartmut W.

  • Author_Institution
    Inst. d´ Electron. et de Telecommun. de Rennes, Univ. of Nantes, Nantes, France
  • fYear
    2013
  • fDate
    21-25 July 2013
  • Firstpage
    145
  • Lastpage
    148
  • Abstract
    In the present work, Mn-doped Ba1-xSrxTiO3 (BST) thin films were realized by Chemical Solution Deposition (CSD) on alumina as the foreseen application for a reflect array needs integration of the ferroelectric on an insulating substrate. The optimum dopant rate to be inserted depending on the materials defect density, we have studied BST doping with a manganese content ranging from 0% to 2%. The dielectric and electrical characteristics were investigated as a function of the Mn content in the frequency range of 100 Hz to 5 GHz.
  • Keywords
    barium compounds; doping profiles; ferroelectric thin films; liquid phase deposition; manganese; strontium compounds; Al2O3; Ba1-xSrxTiO3:Mn; alumina; chemical solution deposition; dielectric characteristics; doping; electrical characteristics; ferroelectric material; frequency 100 Hz to 5 GHz; insulating substrate; manganese doped BST thin films; materials defect density; optimum dopant rate; reflectarray applications; Dielectric losses; Doping; Frequency measurement; Manganese; Materials; Permittivity; BST; Mn-doping; ferroelectric; microwave; thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
  • Conference_Location
    Prague
  • Type

    conf

  • DOI
    10.1109/ISAF.2013.6748697
  • Filename
    6748697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3396732