AlN cantilever for differential pressure sensor

Author

Tomimatsu, Y. ; Takahashi, Hiroki ; Kobayashi, Takehiko ; Matsumoto, Kaname ; Shimoyama, Isao ; Itoh, Takayuki ; Maeda, Ryutaro

Author_Institution

NMEMS Technol. Res. Organ., Japan

fYear

2013

fDate

21-25 July 2013

Firstpage

336

Lastpage

339

Abstract

The differential pressure sensors are used for various applications. In this work, a piezoelectric differential pressure sensor using an aluminum nitride (AlN) thin film cantilever is proposed to achieve high sensitivity and low power consumption. The dimensions of the cantilever are 1500 μm × 1000 μm × 2 μm. The proposed sensor needs no power consumption in the AlN sensing element in principle. The sensor design was validated by measuring the performance of the sensor, which showed sensitivity of 8.2 mV/Pa from -20 Pa to 20 Pa.

Keywords

III-V semiconductors; aluminium compounds; cantilevers; microsensors; piezoelectric devices; pressure sensors; semiconductor thin films; thin film sensors; wide band gap semiconductors; AlN; aluminum nitride thin film cantilever; differential pressure sensor; low power consumption; pressure -20 Pa to 20 Pa; Aluminum nitride; Electrodes; Frequency measurement; III-V semiconductor materials; Micromechanical devices; Organizations; Silicon; AlN; Differential pressure; Piezoelectri cantilever;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the

Conference_Location

Prague

Type

conf

DOI

10.1109/ISAF.2013.6748705

Filename

6748705