DocumentCode :
3397337
Title :
Multiferroic bismuth ferrite based thin films
Author :
Yesner, G. ; Safari, Abdolreza
Author_Institution :
Dept. of Mater. Sci. & Eng., Rutgers Univ., Piscataway, NJ, USA
fYear :
2013
fDate :
21-25 July 2013
Firstpage :
122
Lastpage :
123
Abstract :
Bismuth ferrite thin films have been prepared via a modified polymerizable complex sol-gel method and deposited on SiO2/Si [100] substrates. The rhombohedral BFO phase was obtained by annealing the thin films on a hot plate at 475°C for 30 minutes. Samples annealed at 550°C for 2 hours developed the secondary phase Bi2Fe4O9 due to loss of bismuth.
Keywords :
annealing; bismuth compounds; multiferroics; polymerisation; sol-gel processing; thin films; Bi2Fe4O9; SiO2-Si; SiO2-Si [100] substrates; annealing; multiferroic bismuth ferrite-based thin films; polymerizable complex sol-gel method; rhombohedral BFO phase; secondary phase; temperature 475 degC; temperature 550 degC; time 2 hour; time 30 min; Annealing; Ferroelectric films; Nonvolatile memory; Polymers; Random access memory; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
Conference_Location :
Prague
Type :
conf
DOI :
10.1109/ISAF.2013.6748731
Filename :
6748731
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3397337
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