• DocumentCode
    3397337
  • Title

    Multiferroic bismuth ferrite based thin films

  • Author

    Yesner, G. ; Safari, Abdolreza

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Rutgers Univ., Piscataway, NJ, USA
  • fYear
    2013
  • fDate
    21-25 July 2013
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    Bismuth ferrite thin films have been prepared via a modified polymerizable complex sol-gel method and deposited on SiO2/Si [100] substrates. The rhombohedral BFO phase was obtained by annealing the thin films on a hot plate at 475°C for 30 minutes. Samples annealed at 550°C for 2 hours developed the secondary phase Bi2Fe4O9 due to loss of bismuth.
  • Keywords
    annealing; bismuth compounds; multiferroics; polymerisation; sol-gel processing; thin films; Bi2Fe4O9; SiO2-Si; SiO2-Si [100] substrates; annealing; multiferroic bismuth ferrite-based thin films; polymerizable complex sol-gel method; rhombohedral BFO phase; secondary phase; temperature 475 degC; temperature 550 degC; time 2 hour; time 30 min; Annealing; Ferroelectric films; Nonvolatile memory; Polymers; Random access memory; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
  • Conference_Location
    Prague
  • Type

    conf

  • DOI
    10.1109/ISAF.2013.6748731
  • Filename
    6748731