Title :
III-V nanowires: growth mechanisms, properties and applications in nanooptics and nanoelectronics
Author :
Dubrovskii, V.G.
Author_Institution :
Russian Acad. of Sci., St. Petersburg
fDate :
July 29 2007-Aug. 11 2007
Abstract :
In this work we present an overview of some recent results in the field of growth mechanisms, fundamental properties and applications of lll-V semiconductor nanowires.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; nanotechnology; nanowires; reviews; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; AlN-GaN; lll-V semiconductor nanowires; nanoelectronics; nanooptics; overview; semiconductor growth; Educational technology; Gallium nitride; III-V semiconductor materials; Mechanical factors; Nanoelectronics; Nanoscale devices; Nanowires; Physics; Quantum dots; Surface morphology;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302855
